? 2000 ixys all rights reserved 1 - 3 i frms = 2x 60 a i favm = 2x 36 a v rrm = 800-1800 v v rsm v rrm type vv 900 800 mdd 26-08n1 b 1300 1200 mdd 26-12n1 b 1500 1400 mdd 26-14n1 b 1700 1600 mdd 26-16n1 b 1900 1800 mdd 26-18n1 b symbol test conditions maximum ratings i frms t vj = t vjm 60 a i favm t c = 100 c; 180 sine 36 a i fsm t vj = 45 c; t = 10 ms (50 hz), sine 650 a v r = 0 t = 8.3 ms (60 hz), sine 760 a t vj = t vjm t = 10 ms (50 hz), sine 580 a v r = 0 t = 8.3 ms (60 hz), sine 630 a i 2 dt t vj = 45 c t = 10 ms (50 hz), sine 2100 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 2400 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 1700 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 1900 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m5) 2.5-4/22-35 nm/lb.in. terminal connection torque (m5) 2.5-4/22-35 nm/lb.in. weight typical including screws 90 g symbol test conditions characteristic values i r t vj = t vjm ; v r = v rrm 10 ma v f i f = 80 a; t vj = 25 c 1.38 v v t0 for power-loss calculations only 0.8 v r t t vj = t vjm 6.1 m q s t vj = 125 c; i f = 25 a, -di/dt = 0.6 a/ s50 c i rm 6a r thjc per diode; dc current 1.0 k/w per module other values 0.5 k/w r thjk per diode; dc current see fig. 6/7 1.2 k/w per module 0.6 k/w d s creepage distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 features international standard package jedec to-240 aa direct copper bonded al 2 o 3 -ceramic base plate planar passivated chips isolation voltage 3600 v~ ul registered, e 72873 applications supplies for dc power equipment dc supply for pwm inverter field supply for dc motors battery dc power supplies advantages space and weight savings simple mounting improved temperature and power cycling reduced protection circuits dimensions in mm (1 mm = 0.0394") diode modules 312 to-240 aa 1 2 3 mdd 26 data according to iec 60747 and refer to a single diode unless otherwise stated. ixys reserves the right to change limits, test conditions and dimensions
? 2000 ixys all rights reserved 2 - 3 mdd 26 fig. 1 surge overload current i fsm : crest value, t: duration fig. 2 i 2 dt versus time (1-10 ms) fig. 2a maximum forward current at case temperature fig. 3 power dissipation versus forward current and ambient temperature (per diode) fig. 4 single phase rectifier bridge: power dissipation versus direct output current and ambient temperature r = resistive load l = inductive load
? 2000 ixys all rights reserved 3 - 3 fig. 5 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature fig. 6 transient thermal impedance junction to case (per diode) fig. 7 transient thermal impedance junction to heatsink (per diode) r thjk for various conduction angles d: d r thjk (k/w) dc 1.20 180 1.22 120 1.24 60 1.27 30 1.30 constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.01 0.0012 2 0.03 0.095 3 0.96 0.455 4 0.2 0.495 mdd 26 r thjc for various conduction angles d: d r thjc (k/w) dc 1.00 180 1.02 120 1.04 60 1.07 30 1.10 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.01 0.0012 2 0.03 0.095 3 0.96 0.455
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